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APTM120A20D
Phase leg with Series diodes MOSFET Power Module
VDSS = 1200V RDSon = 200m max @ Tj = 25C ID = 50A @ Tc = 25C
Application * Zero Current Switching resonant mode
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* * *
G1 S1 VBUS 0/VBUS OUT
Benefits * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
S2 G2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM120U20D Rev 0
July, 2004
Tc = 25C
Max ratings 1200 50 37 200 30 200 1250 12 30 1300
Unit V A V m W A
APTM120A20D
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 1.5mA Min 1200
VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25C T j = 125C
Typ
Max 1.5 6 200 5 450
Unit V mA m V nA
VGS = 10V, ID = 25A VGS = VDS, ID = 6mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 50A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 50A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8
Min
Typ 15.2 2.2 0.42 600 84 390 10 10 68 36 2.79 0.6 5.6 0.81
Max
Unit nF
nC
ns
mJ
mJ
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IF(A V) Maximum Average Forward Current VF Diode Forward Voltage
Test Conditions 50% duty cycle IF = 120A IF = 2400A IF = 120A IF = 120A VR = 800V di/dt = 400A/s IF = 120A VR = 800V di/dt = 400A/s
T c = 70C
Min 1200
Typ 120 2 2.3 1.8 400 470 2.4 8
Max
Unit V A V
July, 2004 2-6 APTM120U20D Rev 0
2.5
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns C
APT website - http://www.advancedpower.com
APTM120A20D
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Series diode 2500 -40 -40 -40 3 2 Min Typ Max 0.1 0.46 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Package outline
APT website - http://www.advancedpower.com
3-6
APTM120U20D Rev 0
July, 2004
APTM120A20D
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 150
VGS =15, 10 & 8V 7V 6.5V
Transfert Characteristics 180 ID, Drain Current (A) 150 120 90 60 30 0 TJ =25C TJ=125C 0 1 2 3 4 5 TJ =-55C 6 7 8
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
120 90
6V
60
5.5V
30
5V
0 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 25A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 60 50 40 30 20 10 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V VGS=20V
30
60
90
120
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (C)
July, 2004
APT website - http://www.advancedpower.com
4-6
APTM120U20D Rev 0
APTM120A20D
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 14 12 10 8 6 4 2 0 0 120 240 360 480 600 720 840 Gate Charge (nC) I D=50A TJ=25C
V DS =240V VDS=600V VDS=960V
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=25A
1000
limited by RDS on
100
100s
1ms
10 Single pulse TJ =150C 1 1 1200 10 100 1000 VDS, Drain to Source Voltage (V)
10ms
Gate Charge vs Gate to Source Voltage
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
5-6
APTM120U20D Rev 0
July, 2004
APTM120A20D
Delay Times vs Current 80 td(on) and td(off) (ns) t d(off) 50 tf Rise and Fall times vs Current
60
V DS =800V RG =0.8 T J=125C L=100H
tr and tf (ns)
40
25
V DS =800V RG =0.8 T J=125C L=100H
tr
20
t d(on) 0 10 30 50 70 90 110 10 30 I D, Drain Current (A) Switching Energy vs Current 50 70 90 I D, Drain Current (A) 110
0
Switching Energy vs Gate Resistance 9
12
Switching Energy (mJ)
9 6 3 0 10
Switching Energy (mJ)
VDS=800V RG=0.8 TJ=125C L=100H
E on
Eon 6
VDS=800V ID=50A T J=125C L=100H
Eoff
3
Eoff
0
30
50
70
90
110
0
1
2
3
4
5
6
ID, Drain Current (A) Operating Frequency vs Drain Current 200 175
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
1000 TJ=150C 100 TJ=25C
Frequency (kHz)
150 125 100 75 50 25 0 10 20 30 40 ID, Drain Current (A) 50
VDS=800V D=50% RG=0.8 T J=125C T C=75C
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM120U20D Rev 0
July, 2004

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